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| HUR2X60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 HUR2X60-100 HUR2x60-120 VRSM V 1000 1200 VRRM V 1000 1200 P Q R S T U V W Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Md Weight TC=25oC 50/60Hz, RMS _ IISOL<1mA Test Conditions TC=80oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=16A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive o Maximum Ratings 100 60 800 28 1.6 -40...+150 150 -40...+150 200 2500 1.1-1.5/9-13 1.1-1.5/9-13 30 Unit A A mJ A o C W V~ Nm/lb.in. g mounting torque (M4) terminal connection torque (M4) typical HUR2X60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=60A; TVJ=125oC TVJ=25oC Test Conditions Characteristic Values typ. max. 1 4 1.70 2.42 0.6 0.1 Unit IR VF RthJC RthCH trr IRM mA V K/W ns A IF=1A; -di/dt=400A/us; VR=30V; TVJ=25oC VR=100V; IF=200A; -diF/dt=100A/us; TVJ=100 C o 40 8 FEATURES * International standard package miniBLOC * Isolation voltage 2500 V~ * 2 independent FRED in 1 package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR2X60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 100 A 80 IF 60 TVJ=150C TVJ=100C TVJ= 25C 15.0 C 12.5 Qr 10.0 7.5 5.0 TVJ= 100C VR = 600V 120 A IRM 80 TVJ= 100C VR = 600V 40 IF= 120A IF= 60A IF= 30A IF= 120A IF= 60A IF= 30A 40 20 2.5 0.0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt 0 0 1 2 VF V 3 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 300 ns TVJ= 100C VR = 600V Fig. 3 Peak reverse current IRM versus -diF/dt 60 V VFR 40 tfr 2.0 1.2 us tfr 0.8 1.5 Kf trr 280 VFR 260 1.0 IRM IF= 120A IF= 60A IF= 30A 240 20 0.4 0.5 Qr 220 TVJ= 100C IF = 60A 0.0 0 40 80 120 C 160 TVJ 200 0 200 400 600 -diF/dt 800 A/us 1000 0 0 200 400 0.0 600 A/us 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W 0.1 ZthJC 0.01 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.212 0.248 0.063 0.077 ti (s) 0.0055 0.0092 0.0007 0.0391 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 t s 10 Fig. 7 Transient thermal resistance junction to case |
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